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| 40 10V 4V 30 4.5V 30 25 20 Vds=5V 125C Id (A) 20 3.5V 10 Id (A) 15 10 25C 5 Vgs=3V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 2.2 24 22 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 Vgs=10V Id=6.3A Rds(on) (m:) Vgs=4.5V 20 Vgs=10V 18 Vgs=4.5V Id=5.7A 16 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 Id=6.3A 40 125C 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) Is (A) 30 25C 20 1.0E-02 25C 1.0E-03 1.0E-04 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vgs (Volts) 6 4 2 Vds=30V Id=6.3A Capacitance (pF) 3500 3000 2500 2000 1500 Coss 1000 Crss 500 Ciss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 Rds(on) limited 10.0 100Ps 1ms 10ms 1s 1.0 Tj(max.)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 10Ps Power (W) 40 Tj(max.)=150C Ta=25C 30 Id (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 25 -10V -6V 20 -4V -3.5V 30 Vds=-5V 25 20 -Id (A) -Id (A) -3V 15 15 10 125C 5 10 5 Vgs=-2.5V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 50 25C 0 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 45 Vgs=-4.5V 1.8 1.6 1.4 1.2 1 0.8 Id=-4.9A Vgs=-10V Rds(on) (m:) 40 Vgs=-4.5V Id=-4.4A 35 Vgs=-10V 30 0 5 10 15 20 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=-4.9A 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) -Is (A) 70 60 50 125C 1.0E-02 1.0E-03 1.0E-04 125C 40 30 25C 1.0E-05 1.0E-06 25C 20 2 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-30V Id=-4.9A 8 Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss 500 Crss Ciss -Vgs (Volts) 6 4 2 0 0 10 20 30 40 50 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 10 20 30 40 50 60 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150C, Ta=25C Rds(on) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100Ps 1ms 10ms 10Ps Power (W) 40 Tj(max.)=150C Ta=25C 30 -Id (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZTja Normalized Transient Thermal Resistance Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 |
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